| PART |
Description |
Maker |
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system
35A 1200V NPT Series N-Channel IGBT
35A/ 1200V/ NPT Series N-Channel IGBT
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| BSM15GP120DL BSM150GAL120DL |
15 A, 1200 V, N-CHANNEL IGBT ECONOPIM
150 A, 1200 V, N-CHANNEL IGBT
|
|
| CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| GP1201FSS18 |
Single Switch Low V IGBT Module 1200 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
